Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide
نویسندگان
چکیده
Nd-doped Si-rich silicon oxide thin films were produced by radio frequency magnetron co-sputtering of three confocal cathodes: Si, SiO2, and Nd2O3, in pure argon plasma at 500oC. The microstructure and optical properties of the films were investigated versus silicon excess and post-deposition annealing treatment by means of ellipsometry and Fourier transform infrared spectrometry as well as by the photoluminescence method. A notable emission from Nd 3+ ions was obtained for the as-deposited sample, while the films annealed at 900oC showed the highest peak intensity. The maximum emission was observed for the films with 4.7 at.% of Si excess.
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